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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2559 DESCRIPTION *High Breakdown VoltageVCBO= 1500V (Min) *High Switching Speed *Low Saturation Voltage *Built-in Damper Diode APPLICATIONS *Designed for color TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i UNIT 1500 V 600 V 5 V 8 A 16 A 4 A .cn mi e IC Collector Current- Continuous ICM Collector Current- Pulse IB B Base Current- Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC 50 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2559 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 300mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.5 V ICBO Collector Cutoff Current VCB= 1500V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain VECF C-E Diode Forward Voltage fT Current-Gain--Bandwidth Product COB Output Capacitance w w w. IC= 6A; VCE= 5V IF= 6A IC= 0.1A; VCE= 10V sem isc .cn i 10 5 2 125 83 250 mA 30 9 1.8 V MHz IE= 0; VCB= 10V; ftest=1.0MHz pF Switching Times ts Storage Time ICP= 6A, IB1(end)= 1.2A, fH= 15.75kHz 8.5 s tf Fall Time 0.7 s isc Websitewww.iscsemi.cn 2 |
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